Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates

Xiaoliang Wang, Cuimei Wang, Guoxin Hu, Junxi Wang, Junxue Ran, Cebao Fang, Jianping Li, Yiping Zeng, Jinmin Li, Xinyu Liu, He Qian. Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates. Science in China Series F: Information Sciences, 48(6):808-814, 2005. [doi]

Abstract

Abstract is missing.