Analytical model for uniaxial strained Si inversion layer electron effective mobility

Xiaoyan Wang, Xiaobo Xu, Huifeng Wang. Analytical model for uniaxial strained Si inversion layer electron effective mobility. IET Circuits, Devices & Systems, 13(3):414-419, 2019. [doi]

Authors

Xiaoyan Wang

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Xiaobo Xu

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Huifeng Wang

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