Xiaoyan Wang, Xiaobo Xu, Huifeng Wang. Analytical model for uniaxial strained Si inversion layer electron effective mobility. IET Circuits, Devices & Systems, 13(3):414-419, 2019. [doi]
@article{WangXW19-1,
title = {Analytical model for uniaxial strained Si inversion layer electron effective mobility},
author = {Xiaoyan Wang and Xiaobo Xu and Huifeng Wang},
year = {2019},
doi = {10.1049/iet-cds.2018.5170},
url = {https://doi.org/10.1049/iet-cds.2018.5170},
researchr = {https://researchr.org/publication/WangXW19-1},
cites = {0},
citedby = {0},
journal = {IET Circuits, Devices & Systems},
volume = {13},
number = {3},
pages = {414-419},
}