The following publications are possibly variants of this publication:
- Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and ChallengesMengxing Wang, Yue Zhang, Xiaoxuan Zhao, Weisheng Zhao. micromachines, 6(8):1023-1045, 2015. [doi]
- Stateful implication logic based on perpendicular magnetic tunnel junctionsWenlong Cai, Mengxing Wang, Kaihua Cao, Huaiwen Yang, Shouzhong Peng, Huisong Li, Weisheng Zhao. chinaf, 65(2), 2022. [doi]
- Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layerLuding Wang, Wenlong Cai, Kaihua Cao, Kewen Shi, Bert Koopmans, Weisheng Zhao. chinaf, 65(4), 2022. [doi]
- Compact thermal modeling of spin transfer torque magnetic tunnel junctionY. Wang, Hao Cai, Lirida A. B. Naviner, Y. Zhang, Jacques-Olivier Klein, Weisheng Zhao. mr, 55(9-10):1649-1653, 2015. [doi]
- L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM ApplicationsEfrem Yuan-Fu Huang. PhD thesis, Carnegie Mellon University, USA, 2018. [doi]