TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices

Masahiro Watanabe. TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

Abstract is missing.