Impact of substituting SiO::2:: ILD by low k materials into AlCu RIE metallization

D. Weber, F. Höhnsdorf, A. Hausmann, A. Klipp, Z. Stavreva, J. Herrmann, L. Bauch, M. Junack, H. Neef, M. Nichterwitz, S. Finsterbusch. Impact of substituting SiO::2:: ILD by low k materials into AlCu RIE metallization. Microelectronics Reliability, 41(7):1081-1083, 2001. [doi]

Abstract

Abstract is missing.