Characterisation of P floating islands for 150-200 V FLYMOSFETs - researchr publication authors

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Yann Weber, Jaume Roig, Jean-Michel Reynes, F. Morancho, Evgueniy N. Stefanov, Monique Dilhan, Gérard Sarrabayrouse. Characterisation of P floating islands for 150-200 V FLYMOSFETs. IET Circuits, Devices & Systems, 1(5):333-340, 2007. [doi]

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