Characterisation of P floating islands for 150-200 V FLYMOSFETs

Yann Weber, Jaume Roig, Jean-Michel Reynes, F. Morancho, Evgueniy N. Stefanov, Monique Dilhan, GĂ©rard Sarrabayrouse. Characterisation of P floating islands for 150-200 V FLYMOSFETs. IET Circuits, Devices & Systems, 1(5):333-340, 2007. [doi]

Abstract

Abstract is missing.