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Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric

Kangliang Wei, James Egley, Xiaoyan Liu, Gang Du. Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric. Science in China Series F: Information Sciences, 57(2):1-9, 2014. [doi]

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