Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs - researchr publication authors

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Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 249-252, IEEE, 2023. [doi]

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