Qualification of 50 V GaN on SiC technology for RF power amplifiers

P. J. van der Wel, T. Rödle, B. Lambert, H. Blanck, M. Dammann. Qualification of 50 V GaN on SiC technology for RF power amplifiers. Microelectronics Reliability, 53(9-11):1439-1443, 2013. [doi]

@article{WelRLBD13,
  title = {Qualification of 50 V GaN on SiC technology for RF power amplifiers},
  author = {P. J. van der Wel and T. Rödle and B. Lambert and H. Blanck and M. Dammann},
  year = {2013},
  doi = {10.1016/j.microrel.2013.08.022},
  url = {http://dx.doi.org/10.1016/j.microrel.2013.08.022},
  researchr = {https://researchr.org/publication/WelRLBD13},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {53},
  number = {9-11},
  pages = {1439-1443},
}