Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors - researchr publication authors

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P. G. Whiting, M. R. Holzworth, A. G. Lind, S. J. Pearton, K. S. Jones, L. Liu, T. S. Kang, Fan Ren, Y. Xin. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 70:32-40, 2017. [doi]

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