P. G. Whiting, M. R. Holzworth, A. G. Lind, S. J. Pearton, K. S. Jones, L. Liu, T. S. Kang, Fan Ren, Y. Xin. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 70:32-40, 2017. [doi]
@article{WhitingHLPJLKRX17,
title = {Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors},
author = {P. G. Whiting and M. R. Holzworth and A. G. Lind and S. J. Pearton and K. S. Jones and L. Liu and T. S. Kang and Fan Ren and Y. Xin},
year = {2017},
doi = {10.1016/j.microrel.2017.01.007},
url = {http://dx.doi.org/10.1016/j.microrel.2017.01.007},
researchr = {https://researchr.org/publication/WhitingHLPJLKRX17},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {70},
pages = {32-40},
}