Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

P. G. Whiting, N. G. Rudawski, M. R. Holzworth, S. J. Pearton, K. S. Jones, L. Liu, T. S. Kang, Fan Ren. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 52(11):2542-2546, 2012. [doi]

Abstract

Abstract is missing.