Physics-based memristor models

R. Stanley Williams, Matthew D. Pickett, John Paul Strachan. Physics-based memristor models. In 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013. pages 217-220, IEEE, 2013. [doi]

Authors

R. Stanley Williams

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Matthew D. Pickett

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John Paul Strachan

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