Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors - researchr publication authors

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Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann 0008, Thomas Mikolajick, Johann W. Bartha. Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 51-52, IEEE, 2019. [doi]

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