Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi. Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 295-298, IEEE, 2016. [doi]
@inproceedings{WooJCSSIC16,
title = {Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric},
author = {Myung Hun Woo and Byung Chul Jang and Junhwan Choi and Gwang Hyuk Shin and Hyejeong Seong and Sung Gap Im and Sung-Yool Choi},
year = {2016},
doi = {10.1109/ESSDERC.2016.7599644},
url = {http://dx.doi.org/10.1109/ESSDERC.2016.7599644},
researchr = {https://researchr.org/publication/WooJCSSIC16},
cites = {0},
citedby = {0},
pages = {295-298},
booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016},
publisher = {IEEE},
isbn = {978-1-5090-2969-3},
}