A novel single poly-silicon EEPROM using trench floating gate

Meng-Yi Wu, Shin-Chang Feng, Ya-Chin King. A novel single poly-silicon EEPROM using trench floating gate. In 13th IEEE International Workshop on Memory Technology, Design, and Testing (MTDT 2005), 3-5 August 2005, Taipei, Taiwan. pages 35-37, IEEE Computer Society, 2005. [doi]

@inproceedings{WuFK05,
  title = {A novel single poly-silicon EEPROM using trench floating gate},
  author = {Meng-Yi Wu and Shin-Chang Feng and Ya-Chin King},
  year = {2005},
  doi = {10.1109/MTDT.2005.13},
  url = {http://doi.ieeecomputersociety.org/10.1109/MTDT.2005.13},
  researchr = {https://researchr.org/publication/WuFK05},
  cites = {0},
  citedby = {0},
  pages = {35-37},
  booktitle = {13th IEEE International Workshop on Memory Technology, Design, and Testing (MTDT 2005), 3-5 August 2005, Taipei, Taiwan},
  publisher = {IEEE Computer Society},
  isbn = {0-7695-2313-7},
}