Study on the Variations in Precursor Parameters of Insulated Gate Bipolar Transistors and SiC MOSFETs for Fault Diagnosis

Wei Wu, Yongqian Gu, Mingkang Yu, Yong Chen. Study on the Variations in Precursor Parameters of Insulated Gate Bipolar Transistors and SiC MOSFETs for Fault Diagnosis. In 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023, Singapore, October 16-19, 2023. pages 1-5, IEEE, 2023. [doi]

Abstract

Abstract is missing.