Ping-Chun Wu, Jian-Wei Su, Yen-Lin Chung, Li-Yang Hong, Jin-Sheng Ren, Fu-Chun Chang, Yuan Wu 0009, Ho-Yu Chen, Chen-Hsun Lin, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Shih-Chieh Chang, Wei-Chung Lo, Chih-I Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang. An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips. J. Solid-State Circuits, 59(7):2297-2309, July 2024. [doi]
@article{WuSCHRCWCLHLSCLWLLHTC24,
title = {An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips},
author = {Ping-Chun Wu and Jian-Wei Su and Yen-Lin Chung and Li-Yang Hong and Jin-Sheng Ren and Fu-Chun Chang and Yuan Wu 0009 and Ho-Yu Chen and Chen-Hsun Lin and Hsu-Ming Hsiao and Sih-Han Li and Shyh-Shyuan Sheu and Shih-Chieh Chang and Wei-Chung Lo and Chih-I Wu and Chung-Chuan Lo and Ren-Shuo Liu and Chih-Cheng Hsieh and Kea-Tiong Tang and Meng-Fan Chang},
year = {2024},
month = {July},
doi = {10.1109/JSSC.2023.3343669},
url = {https://doi.org/10.1109/JSSC.2023.3343669},
researchr = {https://researchr.org/publication/WuSCHRCWCLHLSCLWLLHTC24},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {59},
number = {7},
pages = {2297-2309},
}