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The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors

Yongguang Xiao, Minghua Tang, Jiancheng Li, Bo Jiang, John He. The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. Microelectronics Reliability, 52(4):757-760, 2012. [doi]

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