Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs - researchr publication

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Qian Xie, Chen Chen, Mingjun Liu, Shuang Xia, Zheng Wang. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Science in China Series F: Information Sciences, 62(6):62404, 2019. [doi]

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