Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process

Gang Xie, Edward Xu, Bo Zhang, Wai Tung Ng. Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process. Microelectronics Reliability, 52(6):964-968, 2012. [doi]

Abstract

Abstract is missing.