Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory

Yiran Xu, Jian Hu, Jun Xiao, Guangjun Yang, Weiran Kong. Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory. IEEE Trans. on Circuits and Systems, 63-II(11):1064-1068, 2016. [doi]

Abstract

Abstract is missing.