A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

J. P. Xu, Y. P. Li, P. T. Lai, W. B. Chen, S. G. Xu, J. G. Guan. A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects. Microelectronics Reliability, 48(1):23-28, 2008. [doi]

@article{XuLLCXG08,
  title = {A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects},
  author = {J. P. Xu and Y. P. Li and P. T. Lai and W. B. Chen and S. G. Xu and J. G. Guan},
  year = {2008},
  doi = {10.1016/j.microrel.2006.12.007},
  url = {http://dx.doi.org/10.1016/j.microrel.2006.12.007},
  researchr = {https://researchr.org/publication/XuLLCXG08},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {48},
  number = {1},
  pages = {23-28},
}