Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors

Piao-Rong Xu, Ruo He Yao. Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors. Displays, 53:14-17, 2018. [doi]

Abstract

Abstract is missing.