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Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells

Yue Xu, Feng Yan, Zhiguo Li, Fan Yang, Jianguang Chang, Yonggang Wang. Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells. Microelectronics Reliability, 52(7):1337-1341, 2012. [doi]

Authors

Yue Xu

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Feng Yan

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Zhiguo Li

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Fan Yang

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Jianguang Chang

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Yonggang Wang

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