Yue Xu, Feng Yan, Zhiguo Li, Fan Yang, Jianguang Chang, Yonggang Wang. Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells. Microelectronics Reliability, 52(7):1337-1341, 2012. [doi]
@article{XuYLYCW12,
title = {Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells},
author = {Yue Xu and Feng Yan and Zhiguo Li and Fan Yang and Jianguang Chang and Yonggang Wang},
year = {2012},
doi = {10.1016/j.microrel.2012.02.010},
url = {http://dx.doi.org/10.1016/j.microrel.2012.02.010},
researchr = {https://researchr.org/publication/XuYLYCW12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {7},
pages = {1337-1341},
}