Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin

Wei Xu, Tong Zhang, Yiran Chen. Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin. In International Symposium on Circuits and Systems (ISCAS 2008), 18-21 May 2008, Sheraton Seattle Hotel, Seattle, Washington, USA. pages 1898-1901, IEEE, 2008. [doi]

Abstract

Abstract is missing.