13.3 20nm High-density single-port and dual-port SRAMs with wordline-voltage-adjustment system for read/write assists

Makoto Yabuuchi, Yasumasa Tsukamoto, Masao Morimoto, Miki Tanaka, Koji Nii. 13.3 20nm High-density single-port and dual-port SRAMs with wordline-voltage-adjustment system for read/write assists. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 234-235, IEEE, 2014. [doi]

Abstract

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