New Topology Approach for Future Process, Voltage and Temperature Aware SRAM Using Independently Controlled Double-Gate FinFET - researchr publication

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Nandakishor Yadav, Manisha Pattanaik, G. K. Sharma. New Topology Approach for Future Process, Voltage and Temperature Aware SRAM Using Independently Controlled Double-Gate FinFET. J. Low Power Electronics, 11(1):49-62, 2015. [doi]

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