Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating

Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa, Toru Nakura, Shunpei Yamazaki. Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating. In IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023. pages 212-213, IEEE, 2023. [doi]

Authors

Yuto Yakubo

This author has not been identified. Look up 'Yuto Yakubo' in Google

Kazuma Furutani

This author has not been identified. Look up 'Kazuma Furutani' in Google

Kouhei Toyotaka

This author has not been identified. Look up 'Kouhei Toyotaka' in Google

Haruki Katagiri

This author has not been identified. Look up 'Haruki Katagiri' in Google

Masashi Fujita

This author has not been identified. Look up 'Masashi Fujita' in Google

Munehiro Kozuma

This author has not been identified. Look up 'Munehiro Kozuma' in Google

Yoshinori Ando

This author has not been identified. Look up 'Yoshinori Ando' in Google

Yoshiyuki Kurokawa

This author has not been identified. Look up 'Yoshiyuki Kurokawa' in Google

Toru Nakura

This author has not been identified. Look up 'Toru Nakura' in Google

Shunpei Yamazaki

This author has not been identified. Look up 'Shunpei Yamazaki' in Google