A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

Masanao Yamaoka, Yoshihiro Shinozaki, Noriaki Maeda, Yasuhisa Shimazaki, Kei Kato, Shigeru Shimada, Kazumasa Yanagisawa, Kenichi Osada. A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor. J. Solid-State Circuits, 40(1):186-194, 2005. [doi]

@article{YamaokaSMSKSYO05,
  title = {A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor},
  author = {Masanao Yamaoka and Yoshihiro Shinozaki and Noriaki Maeda and Yasuhisa Shimazaki and Kei Kato and Shigeru Shimada and Kazumasa Yanagisawa and Kenichi Osada},
  year = {2005},
  doi = {10.1109/JSSC.2004.838014},
  url = {https://doi.org/10.1109/JSSC.2004.838014},
  researchr = {https://researchr.org/publication/YamaokaSMSKSYO05},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {40},
  number = {1},
  pages = {186-194},
}