Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications

Shengzhe Yan, Zhaori Cong, Nianduan Lu, Jinshan Yue, Qing Luo. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. Science in China Series F: Information Sciences, 66(10), October 2023. [doi]

Abstract

Abstract is missing.