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Bing Yan, Yufeng Xie, Rui Yuan, Yinyin Lin. A BIST scheme for high-speed Gain Cell eDRAM. In 2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, October 25-28, 2011. pages 244-247, IEEE, 2011. [doi]
Abstract is missing.