Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Junya Matsuno, Yumi Higashi, Yutaka Shimizu, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Takeshi Nakano, Yusuke Ochi, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-Woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihisa Watanabe, Toshiyuki Kouchi. A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os. In IEEE International Solid-State Circuits Conference, ISSCC 2025, San Francisco, CA, USA, February 16-20, 2025. pages 1-3, IEEE, 2025. [doi]
Abstract is missing.