Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices

Hao-I Yang, Ching-Te Chuang, Wei Hwang. Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices. In International Symposium on Circuits and Systems (ISCAS 2009), 24-17 May 2009, Taipei, Taiwan. pages 377-380, IEEE, 2009. [doi]

Authors

Hao-I Yang

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Ching-Te Chuang

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Wei Hwang

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