Hao-I Yang, Ching-Te Chuang, Wei Hwang. Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices. In International Symposium on Circuits and Systems (ISCAS 2009), 24-17 May 2009, Taipei, Taiwan. pages 377-380, IEEE, 2009. [doi]
@inproceedings{YangCH09-4,
title = {Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices},
author = {Hao-I Yang and Ching-Te Chuang and Wei Hwang},
year = {2009},
doi = {10.1109/ISCAS.2009.5117764},
url = {http://dx.doi.org/10.1109/ISCAS.2009.5117764},
researchr = {https://researchr.org/publication/YangCH09-4},
cites = {0},
citedby = {0},
pages = {377-380},
booktitle = {International Symposium on Circuits and Systems (ISCAS 2009), 24-17 May 2009, Taipei, Taiwan},
publisher = {IEEE},
}