Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer - researchr publication authors

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Wanting Yang, Dongqing Hu, Xintian Zhou, Xinyu Li, Xingyu Fang, Kai Zhao. Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. In EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021. pages 22-27, ACM, 2021. [doi]

This author has not been identified. Look up 'Wanting Yang' in GoogleThis author has not been identified. Look up 'Dongqing Hu' in GoogleThis author has not been identified. Look up 'Xintian Zhou' in GoogleThis author has not been identified. Look up 'Xinyu Li' in GoogleThis author has not been identified. Look up 'Xingyu Fang' in GoogleThis author has not been identified. Look up 'Kai Zhao' in Google

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