Wanting Yang, Dongqing Hu, Xintian Zhou, Xinyu Li, Xingyu Fang, Kai Zhao. Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. In EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021. pages 22-27, ACM, 2021. [doi]
@inproceedings{YangHZLFZ21,
title = {Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer},
author = {Wanting Yang and Dongqing Hu and Xintian Zhou and Xinyu Li and Xingyu Fang and Kai Zhao},
year = {2021},
doi = {10.1145/3501409.3501414},
url = {https://doi.org/10.1145/3501409.3501414},
researchr = {https://researchr.org/publication/YangHZLFZ21},
cites = {0},
citedby = {0},
pages = {22-27},
booktitle = {EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021},
publisher = {ACM},
isbn = {978-1-4503-8432-2},
}