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Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage

Xiaoming Yang, Tianqian Li, Taiqiang Cao, Jianhong Li. Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage. IEEE Access, 8:151383-151391, 2020. [doi]

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