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Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source

Hsin-Chia Yang, Kuo-Chin Lo, Hsiu-Hsien Yu, Chun-Yian Chang, Kun-Hong Liao, Yu-Jung Liao, Sung-Ching Chi. Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source. In IEEE 2nd International Conference on Knowledge Innovation and Invention, ICKII 2019, Seoul, Korea (South), July 12-15, 2019. pages 415-417, IEEE, 2019. [doi]

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