Jianguo Yang, Ruijun Lin, Keji Zhou, Yuejun Zhang, Xiaoyong Xue, Hangbing Lv. A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices. Microelectronics Journal, 128:105550, 2022. [doi]
@article{YangLZZXL22,
title = {A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices},
author = {Jianguo Yang and Ruijun Lin and Keji Zhou and Yuejun Zhang and Xiaoyong Xue and Hangbing Lv},
year = {2022},
doi = {10.1016/j.mejo.2022.105550},
url = {https://doi.org/10.1016/j.mejo.2022.105550},
researchr = {https://researchr.org/publication/YangLZZXL22},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {128},
pages = {105550},
}