Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses - researchr publication bibliographies

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Chih-Yi Yang, Tian-Li Wu, Tin-En Hsieh, Edward Yi Chang. Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5-1, IEEE, 2018. [doi]

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