The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory

Jaeyun Yi, Myoungsub Kim, Jungwon Seo, Namkyun Park, Seungyun Lee, Jongil Kim, Gapsok Do, Hongjin Jang, Hyochol Koo, Sunglae Cho, Sujin Chae, Taehoon Kim, Myung Hee Na, Seonyong Cha. The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

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