A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding

Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury. A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding. J. Solid-State Circuits, 57(3):845-857, 2022. [doi]

@article{YoonCKCCR22a,
  title = {A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding},
  author = {Jong-Hyeok Yoon and Muya Chang and Win-San Khwa and Yu-Der Chih and Meng-Fan Chang and Arijit Raychowdhury},
  year = {2022},
  doi = {10.1109/JSSC.2022.3141370},
  url = {https://doi.org/10.1109/JSSC.2022.3141370},
  researchr = {https://researchr.org/publication/YoonCKCCR22a},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {57},
  number = {3},
  pages = {845-857},
}