Young Jun Yoon, Byung Deuk Jeon, Byung-Soo Kim, Ki Up Kim, Tae Yong Lee, Nohhyup Kwak, Woo-Yeol Shin, Na Yeon Kim, Yunseok Hong, Kyeong Pil Kang, Dong Yoon Ka, Seong Ju Lee, Yong Sun Kim, Young Kyu Noh, Jaehoon Kim, Dong Keum Kang, Ho Uk Song, Hyeon Gon Kim, Jonghoon Oh. 18.4 An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with non-contact microbump I/O test scheme. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 320-322, IEEE, 2016. [doi]
@inproceedings{YoonJKKLKSKHKKL16,
title = {18.4 An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with non-contact microbump I/O test scheme},
author = {Young Jun Yoon and Byung Deuk Jeon and Byung-Soo Kim and Ki Up Kim and Tae Yong Lee and Nohhyup Kwak and Woo-Yeol Shin and Na Yeon Kim and Yunseok Hong and Kyeong Pil Kang and Dong Yoon Ka and Seong Ju Lee and Yong Sun Kim and Young Kyu Noh and Jaehoon Kim and Dong Keum Kang and Ho Uk Song and Hyeon Gon Kim and Jonghoon Oh},
year = {2016},
doi = {10.1109/ISSCC.2016.7418036},
url = {http://dx.doi.org/10.1109/ISSCC.2016.7418036},
researchr = {https://researchr.org/publication/YoonJKKLKSKHKKL16},
cites = {0},
citedby = {0},
pages = {320-322},
booktitle = {2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016},
publisher = {IEEE},
isbn = {978-1-4673-9467-3},
}