Young Jun Yoon, Byung Deuk Jeon, Byung-Soo Kim, Ki Up Kim, Tae Yong Lee, Nohhyup Kwak, Woo-Yeol Shin, Na Yeon Kim, Yunseok Hong, Kyeong Pil Kang, Dong Yoon Ka, Seong Ju Lee, Yong Sun Kim, Young Kyu Noh, Jaehoon Kim, Dong Keum Kang, Ho Uk Song, Hyeon Gon Kim, Jonghoon Oh. 18.4 An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with non-contact microbump I/O test scheme. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 320-322, IEEE, 2016. [doi]
Abstract is missing.