Gilsang Yoon, DongHyun Ko, Jounghun Park, Donghwi Kim, Jungsik Kim, Jeong-Soo Lee. Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory. IEEE Access, 10:62423-62428, 2022. [doi]
@article{YoonKPKKL22,
title = {Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory},
author = {Gilsang Yoon and DongHyun Ko and Jounghun Park and Donghwi Kim and Jungsik Kim and Jeong-Soo Lee},
year = {2022},
doi = {10.1109/ACCESS.2022.3182397},
url = {https://doi.org/10.1109/ACCESS.2022.3182397},
researchr = {https://researchr.org/publication/YoonKPKKL22},
cites = {0},
citedby = {0},
journal = {IEEE Access},
volume = {10},
pages = {62423-62428},
}