Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu. Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 115-118, IEEE, 2013. [doi]
Abstract is missing.